Induction Heating Silicon Carbide for plasma research

To generate plasma, we apply an electrical field to a gas, with the goal of removing electrons from their nuclei.  These free-flowing electrons give the plasma key properties, including its electrical conductivity, a magnetic field, and sensitivity to external electromagnetic fields.

In this application test, the customer provided sample parts to be induction heated.  Ultraflex demonstrated the ability of the UPT-SB High Frequency Induction system to heat the stainless steel cup to 2700-2800⁰F within three minutes.  This demonstrated the feasibility of the system for Induction Heating Silicon Carbide for plasma research.

EquipmentUltraheat UPT-SB Megahertz Induction Heating System

Materials
• Silicon Carbide cylinder, with 1.22” OD and 0.5” ID

Key ParametersTemperature: 2700-2800⁰F
Power: 1 kW
Time: 180 seconds
Frequency: 1 MHz

Process:

1. The silicon carbide cylinder was centered in a single turn coil.
2. The UPT-SB3, which operates up to 1 MHz was turned on.
3. The part was heated to approximately 2700-2800^oF in 180 seconds.  This demonstrated the feasibility of this system for Induction Heating Silicon Carbide for plasma research.

Results/Benefits:

• Precise control of the time and temperature
• Power on demand with rapid heat cycles
• Repeatable process, not operator dependent
• Safe heating with no open flames
• Energy efficient heating

Pictures

Silicon Carbide Cylinder

Slilcon Carbide Cylinder heated to 2700-2800 F with 1 MHz Induction.

Slilcon Carbide Cylinder heated to 2700-2800 F with 1 MHz Induction.